SKIM606GD066HD ? by semikron rev. 3 ? 14.07.2011 1 skim ? 63 gd trench igbt modules SKIM606GD066HD features ? igbt 3 trench gate technology ? solderless sinter technology ?v ce(sat) with positive temperature coefficient ? low inductance case ? isolated by al 2 o 3 dcb (direct copper bonded) ceramic substrate ? pressure contact technology for thermal contacts and electrical contacts ? high short circuit capability, self limiting to 6 x i c ? integrated temperature sensor typical applications* ? automotive inverter ? high reliability ac inverter wind ? high reliability ac inverter drives absolute maximum ratings symbol conditions values unit igbt v ces 600 v i c t j = 175 c t s =25c 641 a t s =70c 512 a i cnom 600 a i crm i crm = 2xi cnom 1200 a v ges -20 ... 20 v t psc v cc = 360 v v ge 15 v v ces 600 v t j =150c 6s t j -40 ... 175 c inverse diode i f t j = 175 c t s =25c 453 a t s =70c 352 a i fnom 600 a i frm i frm = 2xi fnom 1200 a i fsm t p = 10 ms, sin 180, t j =25c 2880 a t j -40 ... 175 c module i t(rms) t terminal =80c 700 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 2500 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =600a v ge =15v chiplevel t j =25c 1.45 1.85 v t j =150c 1.70 2.10 v v ce0 t j =25c 0.9 1 v t j =150c 0.85 0.9 v r ce v ge =15v t j =25c 0.9 1.4 m ? t j =150c 1.4 2.0 m ? v ge(th) v ge =v ce , i c = 9.6 ma 5 5.8 6.5 v i ces v ge =0v v ce = 600 v t j =25c 0.1 0.3 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 36.96 nf c oes f=1mhz 2.30 nf c res f=1mhz 1.10 nf q g v ge = - 8 v...+ 15 v 4800 nc r gint t j =25c 0.5 ? t d(on) v cc = 300 v i c =600a r g on =3 ? r g off =5 ? di/dt on = 5500 a/s di/dt off =6200a/s t j =150c 150 ns t r t j =150c 120 ns e on t j =150c 16 mj t d(off) t j =150c 1400 ns t f t j =150c 75 ns e off t j =150c 53 mj r th(j-s) per igbt 0.105 k/w
SKIM606GD066HD 2 rev. 3 ? 14.07.2011 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 600 a v ge =0v chip t j =25c 1.6 1.9 v t j =150c 1.7 1.9 v v f0 t j =25c 0.9 1 1.1 v t j =150c 0.75 0.85 0.95 v r f t j =25c 0.8 1.0 1.3 m ? t j =150c 1.1 1.4 1.6 m ? i rrm i f = 600 a di/dt off =5600a/s v ge =-15v v cc = 300 v t j =150c 390 a q rr t j =150c 85 c e rr t j =150c 21 mj r th(j-s) per diode 0.201 k/w module l ce 913nh r cc'+ee' terminal-chip t s =25c 0.3 m ? t s =125c 0.5 m ? w761g temperature sensor r 100 t sensor = 100 c (r 25 = 5 k ? )339 ? b 100/125 r (t) = r 100 exp[b 100/125 (1/t-1/373)]; t[k]; 4096 k skim ? 63 gd trench igbt modules SKIM606GD066HD features ? igbt 3 trench gate technology ? solderless sinter technology ?v ce(sat) with positive temperature coefficient ? low inductance case ? isolated by al 2 o 3 dcb (direct copper bonded) ceramic substrate ? pressure contact technology for thermal contacts and electrical contacts ? high short circuit capability, self limiting to 6 x i c ? integrated temperature sensor typical applications* ? automotive inverter ? high reliability ac inverter wind ? high reliability ac inverter drives
SKIM606GD066HD ? by semikron rev. 3 ? 14.07.2011 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKIM606GD066HD 4 rev. 3 ? 14.07.2011 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
SKIM606GD066HD ? by semikron rev. 3 ? 14.07.2011 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. skim 63 gd
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